酸化物半導体 - 研究開発 | 株式会社半導体エネルギー研究所。IGZOの約10倍の電界効果移動度を持つ酸化物半導体を高知工科大が開発。TSMCやサムスン、IGZOに熱視線 次世代メモリーの切り札 | 日経クロス。Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO : Application to Lsi (Wiley-sid Series in Display Technology)2017 John Wiley and Sons酸化物半導体IGZOのLSI応用をまとめた書籍です。酸化物半導体を用いた高性能・高信頼トランジスタ : 知財活用支援事業。This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process.